کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8179551 | 1526401 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced Low Dose Rate Sensitivity (ELDRS) tests on advanced SiGe bipolar transistors for very high total dose applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A new comprehensive method for assessing Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar transistors to be used for very high total doses is applied to an advanced SiGe HBT technology for its use in the ATLAS Upgrade at CERN. Conventional ELDRS assessment methods are combined with switched experiments (high/low dose rate), providing a way to verify the presence of ELDRS at very high doses in reasonable irradiation time. Additionally, an anomalous damage recovery has been found in transistors with saturated damage after further low dose rate irradiations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 724, 1 October 2013, Pages 41-46
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 724, 1 October 2013, Pages 41-46
نویسندگان
M. Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F.M. Newcomer, F. Martinez-McKinney, W. Kononenko, A.A. Grillo, S. DÃez,