کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8179928 | 1526407 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of the first prototypes of Silicon Photomultipliers with bulk-integrated quench resistor fabricated at MPI semiconductor laboratory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper new results of the characterization of Silicon Photomultipliers (SiPMs) with bulk-integrated quench resistor will be presented. The novel detector concept was developed at the Max-Planck-Institute (MPI) semiconductor laboratory and allows a metal and polysilicon free entrance window which offers an improvement in photon detection efficiency (PDE). For electrical separation and suppression of optical cross talk (OCT) an insensitive area (gap) between neighboring cells is required. Based on simulations the first prototypes with devices of different combinations of cell size and gap were fabricated, providing the opportunity to study the influence of these parameters on the detector performance. First PDE measurements of the new detector are presented together with results of the influence of geometrical variations. Also an outlook on possible future developments of the concept with single cell read-out is given.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 718, 1 August 2013, Pages 262-265
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 718, 1 August 2013, Pages 262-265
نویسندگان
Christian Jendrysik, Ladislav AndriÄek, Gerhard Liemann, Hans-Günther Moser, Jelena NinkoviÄ, Rainer Richter, Florian Schopper,