Recent results of CERN RD39 collaboration on development of radiation hard Si detectors operated at low to cryogenic temperatures

Recent results of CERN RD39 collaboration on the development of radiation hard Si detectors operated at low to cryogenic temperatures will be presented in this paper. It has been found, in comparisons of results of simulation and charge collection data of pad and strip detectors, the charge-injected-diode (CID) operation mode of Si detectors reduces the free carrier trapping, resulting in a much higher charge collection at the SLHC fluence than that in a standard Si detector. The reduction in free carrier trapping by almost a factor of 3 is due to the fact that the CID mode pre-fills the traps, making them neutral and not active in trapping of particle-induced free carriers (signal). It has been found that, electron traps can be pre-filled by injection of electrons from the n+ contact. The CID mode of detector operation can be achieved by a modestly low temperature of ≤−40 °C and a operation bias of <600 V. Results of one CID detector application as LHC beam-loss-monitor (BLM) will be presented. Non-irradiated Si detectors has been shown, with tests by laser using our cryogenic transient-current-technique (TCT), to work quite well at LHe temperature (4 K), which are very stable with no polarization and good charge collection efficiency.