کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8180860 | 1526430 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photon detection by an InSb compound semiconductor detector with reduced leakage current
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photon detection by an InSb compound semiconductor detector with reduced leakage current Photon detection by an InSb compound semiconductor detector with reduced leakage current](/preview/png/8180860.png)
چکیده انگلیسی
An InSb detector was fabricated using a liquid phase epitaxially grown crystal. By changing the electrode structure design, the leakage current of the detector was reduced. In addition, the result of 137Cs-gamma-ray measurement was discussed with a charge collection model with using a modified Hecht's equation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 695, 11 December 2012, Pages 272-275
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 695, 11 December 2012, Pages 272-275
نویسندگان
Yuki Sato, Ikuo Kanno,