کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8181657 | 1526446 | 2012 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance of novel silicon n-in-p planar pixel sensors
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Performance of novel silicon n-in-p planar pixel sensors Performance of novel silicon n-in-p planar pixel sensors](/preview/png/8181657.png)
چکیده انگلیسی
The characterization of these devices has been performed before and after irradiation up to a fluence of 5Ã1015 1 MeV neqcmâ2. Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency of (98.6±0.3)% and a high collected charge of about 10 ke for a device irradiated at the maximum fluence and biased at 1 kV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 679, 1 July 2012, Pages 29-35
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 679, 1 July 2012, Pages 29-35
نویسندگان
C. Gallrapp, A. La Rosa, A. Macchiolo, R. Nisius, H. Pernegger, R.H. Richter, P. Weigell,