کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
820451 1469536 2013 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrostatically assembled layer-by-layer composites containing graphene oxide for enhanced hydrogen gas barrier application
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Electrostatically assembled layer-by-layer composites containing graphene oxide for enhanced hydrogen gas barrier application
چکیده انگلیسی

Hydrogen gas barrier properties of polymeric materials are a critical determinant of their practical use in hydrogen gas storage and transportation container applications. We fabricated multi-layered films containing poly(diallyldimethylammonium) chloride (PDDA) and sulfonated polyvinylidene fluoride (SPVDF)-graphene oxide (GO) composites through layer-by-layer (LBL) assembly to enhance the hydrogen gas barrier properties. Polyethylene terephthalate (PET) substrate was rendered hydrophilic by treatment with aqueous sodium hydroxide solution prior to LBL assembly construction. Positively-charged PDDA and negatively-charged SPVDF or SPVDF/GO composites were assembled by spin-coating and were tightly packed by electrostatic attraction. LBL assemblies were characterized by Fourier transform infrared (FT-IR) spectroscopy and Field emission scanning electron microscopy (FE-SEM) analyses. Electrostatic LBL assembled PDDA/SPVDF-GO films showed improved mechanical and gas barrier properties compared to their respective PDDA/SPVDF LBL assemblies without GO. The hydrogen gas transmission rate (GTR) of a 16 bi-layer LBL assembly with 2 wt.% GO was 11.7 cc/m2 d atm, which was much lower than that of PET substrate (329.1 cc/m2 d atm) and a one bi-layer LBL assembly without GO (277.9 cc/m2 d atm). The drastic decrease in GTR indicates that LBL assembled films are suitable for use in high hydrogen barrier applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Composites Science and Technology - Volume 89, 13 December 2013, Pages 167–174
نویسندگان
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