کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8205269 | 1530579 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of nitrogen-doping configurations with vacancies on conductivity in graphene
ترجمه فارسی عنوان
اثر تنظیمات دوپینگ نیتروژن با جابجایی در هدایت گرافن
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کلمات کلیدی
گرافن، حمل و نقل کوانتومی، نقص نقطه،
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
چکیده انگلیسی
We investigate electronic transport in the nitrogen-doped graphene containing different configurations of point defects: singly or doubly substituting N atoms and nitrogen-vacancy complexes. The results are numerically obtained using the quantum-mechanical Kubo-Greenwood formalism. Nitrogen substitutions in graphene lattice are modelled by the scattering potential adopted from the independent self-consistent ab initio calculations. Variety of quantitative and qualitative changes in the conductivity behaviour are revealed for both graphite- and pyridine-type N defects in graphene. For the most common graphite-like configurations in the N-doped graphene, we also consider cases of correlation and ordering of substitutional N atoms. The conductivity is found to be enhanced up to several times for correlated N dopants and tens times for ordered ones as compared to the cases of their random distributions. The presence of vacancies in the complex defects as well as ordering of N dopants suppresses the electron-hole asymmetry of the conductivity in graphene.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 378, Issues 30â31, 13 June 2014, Pages 2270-2274
Journal: Physics Letters A - Volume 378, Issues 30â31, 13 June 2014, Pages 2270-2274
نویسندگان
T.M. Radchenko, V.A. Tatarenko, I.Yu. Sagalianov, Yu.I. Prylutskyy,