کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8208196 | 1531900 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance analysis of high efficiency InxGa1âxN/GaN intermediate band quantum dot solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
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چکیده انگلیسی
In this subsistent fifth generation era, InxGa1âxN/GaN based materials have played an imperious role and become promising contestant in the modernistic fabrication technology because of some of their noteworthy attributes. On our way of illustrating the performance, the structure of InxGa1âxN/GaN quantum dot (QD) intermediate band solar cell (IBSC) is investigated by solving the Schrödinger equation in light of the Kronig-Penney model. In comparison with p-n homojunction and heterojunction solar cells, InxGa1âxN/GaN IBQD solar cell manifests larger power conversion efficiency (PCE). PCE strongly depends on position and width of the intermediate bands (IB). Position of IBs can be controlled by tuning the size of QDs and the Indium content of InxGa1âxN whereas, width of IB can be controlled by tuning the interdot distance. PCE can also be controlled by tuning the position of fermi energy bands as well as changing the doping concentration. In this work, maximum conversion efficiency is found approximately 63.2% for a certain QD size, interdot distance, Indium content and doping concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Results in Physics - Volume 9, June 2018, Pages 432-439
Journal: Results in Physics - Volume 9, June 2018, Pages 432-439
نویسندگان
Injamam Ul Islam Chowdhury, Jith Sarker, A.S.M. Zadid Shifat, Rezoan A. Shuvro, Abu Farzan Mitul,