Effect of the depth base along the vertical on the electrical parameters of a vertical parallel silicon solar cell in open and short circuit

This article presented a modeling study of effect of the depth base initiating on vertical parallel silicon solar cell's photovoltaic conversion efficiency. After the resolution of the continuity equation of excess minority carriers, we calculated the electrical parameters such as the photocurrent density, the photovoltage, series resistance and shunt resistances, diffusion capacitance, electric power, fill factor and the photovoltaic conversion efficiency. We determined the maximum electric power, the operating point of the solar cell and photovoltaic conversion efficiency according to the depth z in the base. We showed that the photocurrent density decreases with the depth z. The photovoltage decreased when the depth base increases. Series and shunt resistances were deduced from electrical model and were influenced and the applied the depth base. The capacity decreased with the depth z of the base. We had studied the influence of the variation of the depth z on the electrical parameters in the base.