Influence of inhomogeneity and nonlinearity of multilayer structure on dopant redistribution in delta-doped area during epitaxial overgrowth

We analyze dopant dynamics in δδ-doped layer of a multilayer structure during growth of an overlayer. We present an explanation of asymmetrization of dopant distribution, which has recently been shown systematically by experiment [A.M. Nazmul, S. Sugahara, M. Tanaka, J. Crystal Growth 251 (2003) 303]. Spreading of a δδ-layer of Mn, sputtered on the structure GaAs/InGaAs/GaAs, have been estimated for overlayer of GaAs.