کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
843121 1470525 2010 15 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quasi-neutral limit to the drift–diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Quasi-neutral limit to the drift–diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
چکیده انگلیسی

The quasi-neutral limit in a bipolar drift–diffusion model for semiconductors with physical contact-insulating boundary conditions, the general sign-changing doping profile and general initial data which allow the presence of the left and right boundary layers and the initial layers is studied in the one-dimensional case. The dynamic structure stability of the solution with respect to the scaled Debye length is proven by the asymptotic analysis of singular perturbation and the entropy-energy method. The key point of the proof is to use sufficiently the fact that the ‘length’ of the boundary layer is very small in a short time period.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nonlinear Analysis: Theory, Methods & Applications - Volume 72, Issues 9–10, 1 May 2010, Pages 3612–3626
نویسندگان
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