Structural nonlinear effects in In0.53Ga0.47As/GaAs heterostructure bipolar transistor lasers

The effects of carrier capture on nonlinear gain of In0.53Ga0.47As/GaAs heterostructure bipolar transistor (HBT) lasers have been investigated. Calculations show that the gain of transistor laser (TL) for this structure depends on the parameters such as the initial electron energy, structure size, capture time and pump photon energy.