Characterization of ZnSe single crystal grown by VBT using two zone tubular furnace: An excellent material for optoelectronic devices

ZnSe single crystal of size ∼25 mm lengths and ∼10 mm diameter was grown by vertical Bridgman technique using two zone tubular furnace from the synthesized polycrystal of the compound. The powder X-ray diffraction analysis confirmed the crystal system of the grown crystal. The optical band gap of the grown crystal was calculated and found to be ∼2.704 eV by UV–vis–NIR analysis. The crystalline perfection was assessed by using high-resolution X-ray diffractometer (HRXRD) and chemical etching studies which reveals that the grown crystal has good crystalline perfection. The etch pit dislocation density was calculated and found to be 2 × 106 cm−2. Good crystalline perfection and less dislocation density of the grown crystals makes, it important for optoelectronic device fabrications. The dielectric studies were also done over a wide range of frequency 100 Hz to 10 MHz at room temperature.