InxGa1−xAsyP1−y–InzGa1−zAs optical transistor

In this paper, we proposed, modeled and evaluated by numerical simulation of an InGaAsP–InGaAs optical transistor operating at optical communication wavelength of 1.55 μm. We numerically simulated the proposed structure and investigated the transient and steady-state characteristics by calculating the required microscopic parameters and solving the rate equations within the charge control model. The frequency response and bandwidth modulation of the proposed device are also calculated.