Silicon LEDs toward high frequency on-chip link

In this paper, the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias is presented. It is theoretically deducted that these Si-LEDs can operate in GHz range and provide reliable operation. The modulation of Si-LED is verified using the existing two-dimensional (2-D) models to simulate the vertical and lateral fields. With the help of Monte Carlo and Rsoft BeamPROP simulations, the vertical emission, focusing, refraction, splitting and wave-guiding are optimized in standard CMOS technology at 750 nm wavelength. Since the Si-LEDs, waveguides, and Si-photo-detector can be integrated on a single chip, a small micro-photonic system could be realized in the CMOS integrated circuitry standard platform.