Effect of electron-spin relaxation on optical bistability and lasing without population inversion in a three-level V type quantum system

We have discussed effect of electron spin relaxation on optical bistability behavior and lasing without inversion in a three level V-type quantum system. A reasonable range for electron spin relaxation value is chosen to investigate the phenomena previously mentioned. It has been showed that for different values of electron spin relaxation of the system, the bistable threshold intensity and width of hysteresis loop changes dramatically. Following we showed that how one can manipulate the absorption of probe field by variation of electron spin relaxation and achieve laser without inversion in the absence of incoherent field.