کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
847467 | 909227 | 2016 | 7 صفحه PDF | دانلود رایگان |
ZnO nanorod (NR) arrays were grown by a simple two-step chemical bath deposition method. The as-deposited NRs were then annealed at different temperatures (300, 400 and 500 °C) for two time durations (1 and 5 h). The NRs were studied by scanning electron microscopy, photoluminescence spectroscopy, X-ray diffraction and two-point electrical test. Finally, ultraviolet (UV) detection properties of samples as an active layer in UV photodetector devices were evaluated. The structural results showed that the sample annealed at 400 °C had the best crystallinity. Furthermore, it was seen that the optical transparency and band gap of NRs increased with increase of the annealing temperature up to 400 °C and then decreased at 500 °C. The electrical resistance decreases with increment of the annealing temperature due to intensive desorption of oxygen molecules from the surface of ZnO NRs. The UV detection results proved a meaningful relevance of UV detection properties with the density of defects and quantity of oxygen molecules absorbed on the surface. ZnO NRs annealed at 300 °C for 1 h had the highest photosensitivity of ∼300 and photoresponsivity of 2.067 A/W which make it suitable for the practical applications.
Journal: Optik - International Journal for Light and Electron Optics - Volume 127, Issue 11, June 2016, Pages 4675–4681