Design and evaluation of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer

The presence and performance of the tunnel junction layer and back surface field (BSF) layers is the chief reason behind the high efficiency of the multi-junction solar cells. In this work, the focus is on the selection of a suitable material for the tunnel junction along with introducing a new top BSF layer. The simulation work is carried out in ATLAS TCAD. The various performance parameters like open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF) and efficiency (η) are extracted from the proposed solar cell model and are compared with published results to ascertain the accuracy of the present work. Other parameters like the photogeneration rate, spectral response, potential developed, electric field are also determined. I–V curve and the power curve are also plotted for the proposed model. For this proposed structure VOC = 2.668 V, JSC = 18.2 mA/cm2, FF = 88.29% and η = 40.879% are obtained for 1000 suns illuminated under standard AM1.5G spectrum. The obtained outputs and the modeling steps are elaborately explained.