Structural and electrical transport properties of ZnxFe3−xO4 thin film deposited on Si (1 1 1) by pulsed-laser deposition

Polycrystalline thin films of Fe3−xZnxO4 (x = 0.0, 0.01 and 0.02) were prepared by pulsed-laser deposition technique on Si (1 1 1) substrate. X-ray diffraction studies of parent as well as Zn doped magnetite show the spinel cubic structure of film with (1 1 1) orientation. The order–disorder transition temperature for Fe3O4 thin film with thickness of 150 nm are at 123 K (Si). Zn doping leads to enhancement of resistivity by Zn2+ substitution originates from a decrease of the carrier concentration, which do not show the Verwey transition. The Raman spectra for parent Fe3O4 on Si (1 1 1) substrate shows all Raman active modes for thin films at energies of T2g1, T2g3, T2g2, and A1g at 193, 304, 531 and 668 cm−1. It is noticed that the frequency positions of the strongest A1g mode are at 668.3 cm−1, for all parent Fe3O4 thin film shifted at lower wave number as 663.7 for Fe2.98Zn0.02O4 thin film on Si (1 1 1) substrate. The integral intensity at 668 cm−1 increased significantly with decreasing doping concentration and highest for the parent sample, which is due to residual stress stored in the surface.