Structural and electrical properties of In35Sb45Se20−xTex chalcogenide thin films

The structural and electrical properties of the as-prepared and annealed In45Sb35Se20−xTex thin films with different compositions (x = 2.5, 5, 7.5, 10, 12.5 and 15 at.%) prepared by electron beam evaporation method are studied. The XRD patterns of the as-prepared thin film show that the investigated compositions have amorphous and polycrystalline structure depending on the Te content. After annealing the In35Sb45Se20−xTex thin films, at 473 K for 10 min, crystalline peaks are obtained. The electrical measurements were taken during heating in the range from 300 to 600 K. It was found that the resistivity decreases with increasing temperature for all the compositions indicating that these films have a semiconducting behavior. After annealing it was found that the room temperature resistivity of the investigated films were found depend on annealing temperature which cause a reduction by five orders of magnitude. These can be attributed to the amorphous–crystalline transformation, which is accompanied by a pronounced change in the electronic structure.