Realization of temperature in semiconductor using optical principle

Owing to temperature is important for both elemental and compound semiconductor to study various properties, this paper presents a novel technique to measure the temperature in semiconductor at wavelength, 10.59 μm using optical principle. Here both reflection and absorption losses are considered to find out temperature in semiconductor. Reflectance is found using plane wave expansion method, where absorption factor is determined using Maxwell's curl equations. Simulation result reveals that reflectance and transmitted intensity vary linearly with respect to different temperatures. Apart from this, it is also seen that absorbance is zero for all semiconductor at wavelength 10.59 μm. The excellent linear variation of transmitted intensity gives an accurate measurement of temperature in semiconductors at aforementioned wavelength.