کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
848609 909247 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A study on the law of oxidation rate in GaAs-based VCSELs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
A study on the law of oxidation rate in GaAs-based VCSELs
چکیده انگلیسی

In order to accurately control the oxidation aperture in high power vertical cavity surface emitting lasers (VCSELs), the selective oxidation process is studied with experiments. Selective oxidation experiments are carried out upon the simulate wafer of VCSELs at different temperature. Oxidation products are examined at different oxidation depths of oxidation layer and each component content is analyzed. The results of the experiments are analyzed with the kinetics of thermal diffusion. The analyzed results show that the concentration of oxidant is e exponentially declined with increasing depth of oxidation in high-power VCSELs. The oxidation depth stability and precision can be improved by lowering the oxidation temperature and prolonging the oxidation time.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 125, Issue 18, September 2014, Pages 5124–5127
نویسندگان
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