کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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848811 | 909252 | 2014 | 4 صفحه PDF | دانلود رایگان |
In this paper we present the simulation of Metal-Semiconductor-Metal photodetector (MSM-PD) of interdigitated planar structure based on InAlAs/InGaAs adapted for photodetection at the wavelength 1.55 μm. We use the theoretical models to plot the variations of the dark current, the photocurrent, the capacity, and the cut-off frequency of the photodetector as a function of bias voltage and the interelectrode distance. The obtained results show a very low dark current, mainly due to the introduction of a thin layer to increase the Schottky barrier based on In0.52Al0.48As in the epitaxial structure of component. The obtained photocurrent and cut-off frequencies are very appreciable, these latter are mainly limited by the transit time of the photo-generated carriers given the low component capacity obtained by simulation.
Journal: Optik - International Journal for Light and Electron Optics - Volume 125, Issue 11, June 2014, Pages 2543–2546