Growth and structural investigation of new polycrystalline Ga3Se4 semiconductor: Evaluation of its dielectric properties

To establish the powder X-ray data we have synthesized gallium selenide (Ga3Se4) using spec. pure elements gallium and selenium of purity >99.999% adopting three different methods as solid melts, quenching, and quenching⿿annealing. An optimized condition for the synthesis of these materials using evacuated and sealed ampoule has been established. The powder X-ray diffraction analysis revealed that Ga3Se4 can only grow at elevated temperature by quenching and long annealing at suitable temperature. The material prepared by quenching⿿annealing at 500 °C over 500 h was identified as single phased polycrystalline Ga3Se4, and crystallizes in the cubic cell with ao = 5.4531 ⿫, V = 162.155 ⿫3, Dx = 5.375 g/cm3, Z = 1, parameter of atoms ZGa = 3, ZSe = 4 and space group F4¯3m. The low values of dielectric constant and dielectric loss confirm that the specimen has very low density of defects. Negative dielectric constant has been found.