کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
849530 909267 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of electron confinement in GaN/AlxGa1−xN quantum wire nanostructure
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Analysis of electron confinement in GaN/AlxGa1−xN quantum wire nanostructure
چکیده انگلیسی

Schrödinger equation in two dimensions has been solved to realize the electron confinement and spread of wave function in quantum wire nanostructure. Using transfer matrix method (TMM), eigen energy has been evaluated for different wire widths and aluminum mole fraction. It has been observed that for increasing aluminum composition, eigen energy increases. For aluminum mole fraction of 10% eigen energy was 0.02139 eV and for aluminum mole fraction of 30%, it was got increased to 0.0325 eV with wire dimensions of 10 nm. It has been analyzed from the results that the increasing aluminum mole fraction in the barrier region increases the wave function intensity in the wire region.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 124, Issue 9, May 2013, Pages 802–806
نویسندگان
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