Demonstration of temperature resilient properties of 2D silicon carbide photonic crystal structures and cavity modes

In this paper, photonic crystal (PhC) based on two dimensional (2D) square and hexagonal lattice periodic arrays of Silicon Carbide (SiC) rods in air structure have been investigated using plane wave expansion (PWE) method. The PhC designs have been optimized for telecommunication wavelength (λ = 1.55 μm) by varying the radius of the rods and lattice constant. The result obtained shows that a photonic band gap (PBG) exists for TE-mode propagation. First, the effect of temperature on the width of the photonic band gap in the 2D SiC PhC structure has been investigated and compared with Silicon (Si) PhC. Further, a cavity has been created in the proposed SiC PhC and carried out temperature resiliency study of the defect modes. The dispersion relation for the TE mode of a point defect A1 cavity for both SiC and Si PhC has been plotted. Quality factor (Q) for both these structures have been calculated using finite difference time domain (FDTD) method and found a maximum Q value of 224 for SiC and 213 for Si PhC cavity structures. These analyses are important for fabricating novel PhC cavity designs that may find application in temperature resilient devices.