کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
849689 | 909272 | 2013 | 4 صفحه PDF | دانلود رایگان |
The performance characteristics of deep violet In0.082Ga0.918N/GaN double quantum well (DQW) laser diodes (LDs) with different electron blocking layer (EBL) including a ternary AlGaN bulk EBL, a quaternary AlInGaN bulk EBL and ternary AlGaN multi quantum barrier (MQB) EBL has been numerically investigated. Inspired by the abovementioned structures, a new LD structure with a quaternary AlInGaN MQB EBL has been proposed to improve the performance characteristics of the deep violet InGaN DQW LDs. Simulation results indicated that the LD structure with the quaternary AlInGaN MQB EBL present the highest output power, slope efficiency and differential quantum efficiency (DQE) and lowest threshold current compared with the above mentioned structures. They also indicated that choosing an appropriate aluminum (Al) and indium (In) composition in the quaternary AlInGaN MQB layers could control both piezoelectric and spontaneous polarizations. It will decrease the electron overflow from the active region to p-side and increased the contribution of electron and hole carriers to the radiative recombination effectively. Enhancing radiative recombination in the well using the quaternary AlInGaN MQB EBL also increased the optical output power and optical intensity.
Journal: Optik - International Journal for Light and Electron Optics - Volume 124, Issue 24, December 2013, Pages 6765–6768