Optical effects on the characteristics of GaAs nanoscale FinFET with vertical Gaussian doping profile

In this paper, the optical effects on the characteristics of GaAs FinFET with Gaussian doping profile in the vertical direction of the channel considering quantum mechanical effects (QME) have been theoretically examined and analyzed. The device characteristics are obtained using self-consistent solution of 3D Poisson–Schrödinger equations using interpolating wavelet method and Simpson's one-third rule. This method provides more accurate results by dynamically adjusting the computational mesh and scales the CPU time linearly with the number of mesh points using polynomial interpolation, hence reducing the numerical cost. The results obtained are compared with uniformly doped Si FinFET photodetector characteristics and used to examine the performance of the device for its suitable use as a photodetector in Opto-Electronic Integrated Circuit (OEIC) receivers.