کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
850717 909289 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optimization of optical gain in AlxGa1−xN/GaN/AlxGa1−xN strained quantum well laser
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Optimization of optical gain in AlxGa1−xN/GaN/AlxGa1−xN strained quantum well laser
چکیده انگلیسی

In this paper the optical gain in wurtzite AlGaN/GaN quantum well is studied. The effects of temperature, carrier concentration, quantum well width, and barrier width are analyzed theoretically taken into account the strong built-in electric field effect due to the piezoelectric and spontaneous polarization in the nitride materials. The numerical results clearly show that the increasing of carrier concentration, and decreasing of temperature and well widths, the optical gain increases.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 123, Issue 17, September 2012, Pages 1546–1549
نویسندگان
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