Investigation of the intracavity frequency doubling of a gain-switched InGaAs/GaAs pulsed diode laser

A mathematical model describing the dynamic emission of the intracavity frequency doubling (IFD) of a gain-switched two-section InGaAs/GaAs diode laser has been presented. One section is electrically pumped to provide gain, while the second section is unpumped (reverse biased) to provide a saturable absorber. The three-dimensional physical problem is reduced to one-dimensional model using adiabatic approximation, which allows the separation of the wavefunction. The suggested model in this paper allows studying the impact of the variations of the input InGaAs/GaAs/KTP diode laser parameters on the output pulsation characteristics. The proposed mathematical model is solved numerically using fourth-order Runge-Kutta method. The numerical calculations reflect the influence of the variation of the applied gain current and saturable bias current on the output laser pulse characteristics. The numerical results show good consistency with the available experimental data in references.