Optimization towards reduction of efficiency droop in blue GaN/InGaN based light emitting diodes

Light emitting diodes (LEDs) based on GaN/InGaN material suffer from efficiency droop at high current injection levels. We propose multiple quantum well (MQW) GaN/InGaN LEDs by optimizing the barrier thickness and high–low–high indium composition to reduce the efficiency droop. The simulation results reflect a significant improvement in the efficiency droop by using barrier width of 10 nm and high–low–high indium composition in MQW LED.