کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
852108 | 909356 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In situ time-resolved optical measurements of a-Si thin films during excimer laser crystallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: In situ time-resolved optical measurements of a-Si thin films during excimer laser crystallization In situ time-resolved optical measurements of a-Si thin films during excimer laser crystallization](/preview/png/852108.png)
چکیده انگلیسی
An in situ time-resolved optical reflection and transmission (TRORT) monitoring system combining two He–Ne probe lasers, a digital oscilloscope and three fast photodetectors is developed to investigate the crystallization processes of Si thin films during excimer laser crystallization (ELC). The physical meaning of optical spectra obtained by TRORT measurements has been interpreted in detail. The melt duration and transient phase transformation dynamics of Si thin films can be determined and interpreted immediately. A high efficiency and non-destructive evaluation approach is proposed for determining the grain size of polycrystalline Si after ELC directly and immediacy under appropriate experimental conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 122, Issue 8, April 2011, Pages 655–659
Journal: Optik - International Journal for Light and Electron Optics - Volume 122, Issue 8, April 2011, Pages 655–659
نویسندگان
Chil-Chyuan Kuo,