The combined effect of temperature of operation and external optical feedback on the turn-on time delay of semiconductor laser diodes

In this paper, the combined effect of temperature of operation (T) and external optical feedback (EOF) on the turn-on time delay (ton) of semiconductor laser (SLD) is investigated theoretically. General and exact analytical model of ton in term nonradiative (A), radiative (B) and Auger (C) recombination coefficients, carrier density, injection current (Iinj) and T is derived for the first time. In addition, EOF parameters, i.e. external reflectivity (rext) and phase of reflected light (ϕ) is also included. The combined effect of T and EOF on ton is calculated according to its effect on threshold carrier density (Nth). We show that when SLD operates under the effect of coherent (incoherent) EOF, ton decreases (increases) as rext increases due to decreasing (increasing) of Nth at coherent (incoherent) EOF. Moreover, ton increases as T increases due to increasing of Nth. Moreover, we identified in operable regions of SLD where the latter fails to operate due to very long ton.