Fabrication of the slanted electrode matrix on tilting 4.5° (1 1 1) silicon

The slanted low electrode matrix is designed and fabricated on one tilting 4.5° (1 1 1) silicon wafer to reduce the actuating voltage of 8×8 micro-electromechanical systems (MEMS) optical switch matrix. Due to compact size of the upper electrode chip and (1 1 1) silicon anisotropic etching in KOH solution, photomask is designed which is to fabricate the slanted low electrode matrix that can be matched with the upper electrode chip and every slanted low electrode has enough space for actuating cantilever. The experimental results show that all of the applied voltages for the full range of actuating micromirrors of 8×8 MEMS optical switch matrix are in the range of 67.2±0.5 V. It is demonstrated that the fabricated slanted low electrode matrix has good consistency and every slanted low electrode can be precisely aligned with one-to-one corresponding upper electrodes.