کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
862174 1470799 2012 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Progress in Dielectric Properties of CaCu3Ti4O12 Thin Films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Progress in Dielectric Properties of CaCu3Ti4O12 Thin Films
چکیده انگلیسی

CCTO is believed to have a variety of potential applications due to its unusual high dielectric constant and very high thermal stability. In this paper, the dielectric properties of CCTO thin films and their current technical progresses are reviewed. It is found that the orientation of crystal axis, the average particle size, processing temperature and substrate preparation and other factors can significantly influence the dielectric properties of CCTO films. How to improve the preparation method to obtain the CCTO films with higher dielectric constant and lower dielectric loss will become one of the focused topics in the future research works.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Procedia Engineering - Volume 27, 2012, Pages 583-591