Influence of Thermal and Gamma Radiation on Electrical Properties of Thin NiO Films Formed by RF Sputtering

Electrical properties of p-NiO films fabricated by RF magnetron sputtering were characterized after deposition, heat treatment in oxygen or argon and after irradiation using 660 keV photons. The results show, that resistivity of the NiO film is strongly increased after thermal processes in Ar and gradually increased after subsequent irradiation processes because of the decrease of holes concentration.