A 130 nm 1Mb Embedded Phase Change Memory with 500 kb/s Single Channel Write Throughput

A 130 nm 1Mb embedded phase change memory (PCM) has been achieved, requiring only three additional masks for phase change storage element, featuring 500 kb/s single channel write throughput and > 108 endurance. The prepare process has been optimized to reduce the cost and power. An 80 nm heat electrode has been prepared with 130 nm process. The optimal Read/Write circuit module is designed to realize the load/store function for PCM. The critical operation parameter is Reset/70 ns/2.5 mA and Set/1500 ns/1 mA, which means that the signal channel write throughput arrives to 500 kb/s.