Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates

The electrical properties of undoped and doped with indium Hg1−xCdxTe (x ≈ 0.3) films grown by the MBE method on Si (0 1 3) were investigated. In as-grown films, staking faults and trending dislocations with densities of ∼106 cm−2 and ∼107 cm−2, respectively, are observed. Annealing films under conditions causing the formation of mercury vacancies leads to drastic decrease of the staking faults (<104 cm−2). Filling vacancies leads to a decrease in the contribution of Shockley-Read recombination and to an increase in the lifetime. The dominant generation-recombination level in the as-grown Hg1−xCdxTe/Si(0 1 3) is the level associated with the vacancies. The magnetic field dependences of the Hall effect in the magnetic field range of 0.05-1.0 T at 77 K were explained by the fact that, in the films, there are two types of electrons with high and low mobilities.