کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9566720 1388367 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of cubic phase MgZnO/Si(1 0 0) interfaces
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Characterization of cubic phase MgZnO/Si(1 0 0) interfaces
چکیده انگلیسی
The microstructural properties of the MgxZn1−xO/Si(1 0 0) interface were investigated using transmission electron microscopy (TEM) and chemical states of the heterostructure were studied by high resolution X-ray photoelectron spectroscopy (XPS). By analyzing the valence band spectra of thin MgxZn1−xO/Si(1 0 0) heterostructures, the valence band offset between such Mg0.55Zn0.45O and Si(1 0 0) was obtained to be 2.3 eV. Using the cubic ternary thin films as insulators, metal-insulator-semiconductor (MIS) capacitors have been fabricated. Leakage current density lower than 3 × 10−7 A/cm2 is obtained under the electrical field of 600 kV/cm by current-voltage (I-V) measurement. Frenkel-Poole conduction mechanism is the main cause of current leakage under high electrical field.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 4, 15 November 2005, Pages 1147-1152
نویسندگان
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