کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9566780 | 1503712 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of dc negative-bias and silicon introduction on performance of Si-B-N composite film by RF-PECD technique
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Under action of different dc negative-bias voltages on samples incorporating with silicon, a series of Si-B-N composite films were synthesized on steel 1045 using RF-PECVD technique (radio-frequency plasma enhanced chemical vapor deposition), and the surface analysis of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and etc. were followed. The experimental results showed: Si-B-N composite films had an obvious mixture phase of c-BN and h-BN crystal at a certain dc negative bias, and the film's mechanical performances including micro-hardness and adhesion were improved. Moreover, bias effect on deposition performance of Si-B-N composite film has been systematically investigated, and silicon introduction was found to be necessary for the growth of Si-B-N film and the improvement of adhesion.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 245, Issues 1â4, 30 May 2005, Pages 45-50
Journal: Applied Surface Science - Volume 245, Issues 1â4, 30 May 2005, Pages 45-50
نویسندگان
Meng Hua, Yu Xiang, Yu Junfeng, Wang Chengbiao,