کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9566854 | 1503707 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bismuth oxide thin films prepared by chemical bath deposition (CBD) method: annealing effect
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Bismuth oxide thin films have been deposited by room temperature chemical bath deposition (CBD) method and annealed at 623Â K in air. They were characterized for structural, surface morphological, optical and electrical properties. From the X-ray diffraction patterns, it was found that after annealing a non-stoichiometric phase, Bi2O2.33, was removed and phase pure monoclinic Bi2O3 was obtained. Surface morphology of Bi2O3 film at lower magnification SEM showed rod-like structure, however, higher magnification showed a rectangular slice-like structure perpendicular to substrate, giving rise to microrods on the surface. The optical studies showed the decrease in band gap by 0.3Â eV after annealing. The electrical resistivity variation showed semiconductor behavior and from thermoemf measurements, the electrical conductivity was found to be of n-type.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 250, Issues 1â4, 31 August 2005, Pages 161-167
Journal: Applied Surface Science - Volume 250, Issues 1â4, 31 August 2005, Pages 161-167
نویسندگان
T.P. Gujar, V.R. Shinde, C.D. Lokhande, R.S. Mane, Sung-Hwan Han,