کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9566856 | 1503707 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The solubility of phosphorus in GaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
IIIVxN1âx ternary alloys are promising materials for their applications in light-emitting devices in the range of wavelength from ultra violet to the infrared ray due to the large bowing of band gap energy. In this paper, molecular dynamical method was used to calculate the solubility of phosphorus in GaN by using the Gibbs free energy and the dielectric theory. The calculation results show that the content of P in GaN varies with the growth temperature, which may be larger than 25% in the N-rich GaPxN1âx or less than 90% in the P-rich GaPxN1âx, at the growth temperature of about 1500 K. We compared our theoretical results with those reported in references. By using light-radiation heating together with low-pressure metal-organic chemical vapor deposition, and ion implantation techniques, we have successfully synthesized N-rich (x < 0.17) and P-rich GaPxN1âx (x > 0.90) compounds.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 250, Issues 1â4, 31 August 2005, Pages 182-187
Journal: Applied Surface Science - Volume 250, Issues 1â4, 31 August 2005, Pages 182-187
نویسندگان
X.S. Wu, Z.Y. Zhai, Y.H. Fan, D.J. Chen, B. Shen, R. Zhang, Y.D. Zheng, S.S. Jiang,