کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9566860 1503707 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Application of a self-sensing conductive probe for Si device imaging
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Application of a self-sensing conductive probe for Si device imaging
چکیده انگلیسی
For the evaluation of two-dimensional carrier profiles in semiconductor devices, we have developed a novel form of probe-sensor combined unit that uses an etched tungsten wire as a conductive probe, and commercially available quartz tuning fork as the force sensor. This unit has a self-sensing capability due to the piezoelectric effect of quartz tuning fork, thus obviating optical setup, and its conductivity is higher and more stable than that of conventional metal-coated Si cantilever. In addition, this probe-sensor combined unit is inexpensive and easy to use, when compared to the well-known optical methods of Si-based cantilever vibration detection system. Our scanning probe microscope using this probe-sensor combined unit is able to mapping the capacitive gradient signal (dC/dZ image) and internal damping of quartz tuning fork oscillation (dissipation image) while scanning the sample surface. In this letter, we show the results of visualization of the p-n junction locus of a Si metal-oxide-semiconductor field effect transistor in both dC/dZ and dissipation images.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 250, Issues 1–4, 31 August 2005, Pages 209-215
نویسندگان
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