کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9566980 | 1503709 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Pulsed-laser deposition (PLD) of ZnTe was performed at λpld = 1064 nm and λpld = 532 nm employing nanosecond pulses of a Nd:YAG laser. Thin ZnTe films (thickness â2 μm) were deposited at room temperature on fused silica glass substrates. X-ray diffraction revealed the influence of the ablation wavelengths on the deposited film texture. The film formed at λpld = 532 nm is amorphous, whereas the one ablated at λpld = 1064 nm was amorphous but contained zincblende and wurtzite crystallites as well. The samples exhibited a broad photocurrent response extending into the visible and infrared part of the spectrum to almost 1 eV. The absorption coefficients, which were measured with standard constant photocurrent method (s-CPM), showed that the bandgap of the films is considerably shifted to lower energies of 1.0 eV as compared to the crystalline source material of 2.26 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 248, Issues 1â4, 30 July 2005, Pages 402-405
Journal: Applied Surface Science - Volume 248, Issues 1â4, 30 July 2005, Pages 402-405
نویسندگان
A. Erlacher, M. Ambrico, G. Perna, L. Schiavulli, T. Ligonzo, H. Jaeger, B. Ullrich,