(Zr, Sn)TiO4 thin films for application in electronics

Thin films of zirconium tin titanate, (Zr0.8Sn0.2)TiO4 (ZST) were deposited using a pulsed electron beam source based on a channel-spark discharge for target ablation. An advanced degree of crystallization was obtained for the films deposited on alumina substrate post-annealed at 1000 °C. The crystalline lattice constants of the films are very close to those of the target material, which confirms the same stoichiometry in ZST films and in the bulk.