کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567334 | 1503713 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoemission study on interfacial reaction of Ti/n-type GaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In order to understand the mechanism of ohmic-contact formation by the annealing of Ti electrodes on n-type GaN, we have investigated the changes in the energy-band structure of Ti/n-type GaN depending on annealing temperature using photoemission spectroscopy. Valence-band spectrum for an as-deposited sample was explained by the simple summation of Ti and GaN spectra. Spectral line shapes significantly changed by annealing at 500 and 700 °C, suggesting the formation of a TiN layer. The peak shifts of Ga 3d and N 1s core levels are interpreted as the energy-band bending and interfacial reaction with the formation of the TiN layer. It is revealed that the ohmic-contact formation by the annealing is attributed to the formation of GaN with nitrogen vacancies, which is consistent with the current-voltage characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 244, Issues 1â4, 15 May 2005, Pages 277-280
Journal: Applied Surface Science - Volume 244, Issues 1â4, 15 May 2005, Pages 277-280
نویسندگان
T. Naono, J. Okabayashi, S. Toyoda, H. Fujioka, M. Oshima, H. Hamamatsu,