کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567526 | 1503718 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray photoelectron spectroscopic analysis of HfO2/Hf/SiO2/Si structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A stoichiometric HfO2 film was successfully prepared using direct reactive sputtering deposition on a native SiO2/Si wafer, before which an ultrathin Hf metal film was deposited as a buffer layer. X-ray photoelectron spectroscopy depth profiling technique was employed to investigate the interface chemistry of the obtained structure. It was observed that Hf silicates were formed in the interfacial layer. The binding energies of Hf 4f and O 1s shifted to higher binding energy side synchronously during the removal of the contaminant layer. These shifts were attributed to the modification of the surface potential by Ar+ sputtering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 241, Issues 1â2, 28 February 2005, Pages 135-140
Journal: Applied Surface Science - Volume 241, Issues 1â2, 28 February 2005, Pages 135-140
نویسندگان
Ruiqin Tan, Yasushi Azuma, Isao Kojima,