کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9568835 | 1388437 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature](/preview/png/9568835.png)
چکیده انگلیسی
Gallium doped zinc oxide (ZnO:Ga) films were prepared on glass substrates by r.f. magnetron sputtering at low substrates temperature. Structural, electrical and optical properties of the ZnO:Ga films were investigated in terms of the preparation conditions. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (0 0 2) crystallographic direction. The transmittance of the ZnO:Ga films in the visible range was over 90%. The lowest resistivity and sheet resistance for the ZnO:Ga films were about 3.9 à 10â4 Ω cm and 4 Ω/â¡, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 239, Issue 2, 15 January 2005, Pages 222-226
Journal: Applied Surface Science - Volume 239, Issue 2, 15 January 2005, Pages 222-226
نویسندگان
Xuhu Yu, Jin Ma, Feng Ji, Yuheng Wang, Xijian Zhang, Chuanfu Cheng, Honglei Ma,