کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9572186 1388504 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation of niobium oxynitrides by rapid thermal processing (RTP)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Formation of niobium oxynitrides by rapid thermal processing (RTP)
چکیده انگلیسی
The potential of rapid thermal processing (RTP) for the preparation of thin films of niobium oxynitrides was investigated. The 200 and 500 nm niobium films were deposited via sputtering on oxidized silicon(1 0 0)- and on sapphire(1 −1 0 2)-substrates. At first, oxidation of niobium films in molecular oxygen and then nitridation in ammonia using an RTP-system was performed. The films were characterized before and after the oxidation and nitridation processes by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and secondary ion mass spectrometry (SIMS). The influence of the two different substrates, amorphous SiO2 and single crystalline sapphire on the reactivity of the niobium films was studied in dependence of temperature, time of reaction and film thickness. The existence of niobium oxynitride formation was verified for some of the films. In some of the experiments, crack formation in the films or even delamination of the Nb-films from the substrates was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 1, 30 September 2005, Pages 205-210
نویسندگان
, , , ,