کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9572186 | 1388504 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of niobium oxynitrides by rapid thermal processing (RTP)
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The potential of rapid thermal processing (RTP) for the preparation of thin films of niobium oxynitrides was investigated. The 200 and 500Â nm niobium films were deposited via sputtering on oxidized silicon(1Â 0Â 0)- and on sapphire(1Â â1Â 0Â 2)-substrates. At first, oxidation of niobium films in molecular oxygen and then nitridation in ammonia using an RTP-system was performed. The films were characterized before and after the oxidation and nitridation processes by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and secondary ion mass spectrometry (SIMS). The influence of the two different substrates, amorphous SiO2 and single crystalline sapphire on the reactivity of the niobium films was studied in dependence of temperature, time of reaction and film thickness. The existence of niobium oxynitride formation was verified for some of the films. In some of the experiments, crack formation in the films or even delamination of the Nb-films from the substrates was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 1, 30 September 2005, Pages 205-210
Journal: Applied Surface Science - Volume 252, Issue 1, 30 September 2005, Pages 205-210
نویسندگان
V.A. Matylitskaya, W. Bock, K. Thoma, B.O. Kolbesen,