Analysis of the carrier concentration for field emission from AlxGa1−xN

The field emission current density j from the ternary alloy AlxGa1−xN is theoretically calculated as a function of composition x for 0 ≤ x ≤ 1. By considering the doping and background concentrations and the internal field emission as sources of the carrier concentration n, we use a fully exact scheme to calculate j from AlxGa1−xN. It is found that the exact x-dependence of n yields theoretical j in agreement with experiment.